MFG:IR Package Cooled:TO-3 D/C:04+
MFG: IR
Package Cooled: TO-3
D/C: 04+
Description: The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistor...
The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest '' State of the Art!± design achieves: very low on-state resi tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
| Parameter | Max. | Units | |
| ID @ VGS =0V TC =25 | Continuous Drain Current | 45 | A |
| ID @ VGS =0V TC =100 | Continuous Drain Current | 31 | |
| IDM | Pulsed Drain Current | 220 | |
| PD @ TC =100 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 480 | mJ |
| IAR | Avalanche Current | - | A |
| EAR | Repetitive Avalanche Energy | - | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 150 | |
| Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s) | ||
| Weight | 11.5(typical) | g |
IRF054
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The HEXFET technology of the IRF034is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest ''State of the Art!± design achieves: very low on-state resi tance combined with ...
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