MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
IRF1104S, IRF1104SPBF, IRF1104STRLPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 40V 100A D2PAK
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Datasheet: IRF1104S
File Size: 213879 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRF1104SPBF
File Size: 269464 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1104L) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 100 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 71 | |
| IDM | Pulsed Drain Current | 400 | |
| PD @ TA =25 | Power Dissipation | 2.4 | W |
| PD @ TC =25 | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 350 | mJ |
| IAR | Avalanche Current | 60 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRF1104SPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 2.4W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 93nC @ 10V |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1104SPBF IRF1104SPBF |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1104L) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 100 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 71 | |
| IDM | Pulsed Drain Current | 400 | |
| PD @ TA =25 | Power Dissipation | 2.4 | W |
| PD @ TC =25 | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 350 | mJ |
| IAR | Avalanche Current | 60 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
| Technical/Catalog Information | IRF1104STRLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 2.4W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 93nC @ 10V |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1104STRLPBF IRF1104STRLPBF |
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