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IRF130, IRF1302, IRF1302L

Table of contents:
Info of IRF130
Info of IRF1302
Info of IRF1302L

IRF130, IRF1302, IRF1302L Selling Leads, Datasheet

MFG:IR D/C:03+

IRF130, IRF1302, IRF1302L Datasheet download

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Part Number: IRF130

MFG: IR

Package Cooled:

D/C: 03+

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IRF130 General Description

The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors The efficient geometry and unique processing of this latest "State of the Art"± design achieves: very low on-state resi tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audioamplifiers and high energy pulse circuits.

IRF130 Maximum Ratings

	Parameter	Max.	Units
I_D @ VGS =0V T_C =25	Continuous Drain Current	14	A
I_D @ VGS =0V T_C =100	Continuous Drain Current	9.0
I_DM	Pulsed Drain Current	56
P_D @ T_C =100	Max. Power Dissipation	75	W
	Linear Derating Factor	0.60	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	75	mJ
I_AR	Avalanche Current	14	A
E_AR	Repetitive Avalanche Energy	7.5	mJ
dv/dt	Peak Diode Recovery dv/dt	5.5	V/ns
T_JT_STG	Operating Junction Storage Temperature Range	-55 to + 150
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10s)
	Weight	11.5(typical)	g

IRF130 Features

·Repetitive Avalanche Ratings
·Dynamic dv/dt Rating
·Hermetically Sealed
·Simple Drive Requirements
·Ease of Paralleling

IRF1302 General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operatin temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1302 Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C =25	Continuous Drain Current,VGS @ 10V	180	A
I_D @ T_C =100	Continuous Drain Current,VGS @ 10V	130
I_DM	Pulsed Drain Current	700
P_D @ T_C =25	Power Dissipation	230	W
	Linear Derating Factor	1.5	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	350	mJ
I_AR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
E_AR	Repetitive Avalanche Energy	See Fig.12a, 12b, 15, 16	mJ
dv/dt	Peak Diode Recovery dv/dt	TBD	V/ns
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

IRF1302 Features

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax

IRF1302L General Description

IRF1302L Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C =25	Continuous Drain Current,VGS @ 10V	174	A
I_D @ T_C =100	Continuous Drain Current,VGS @ 10V	120
I_DM	Pulsed Drain Current	700
P_D @ T_C =25	Power Dissipation	200	W
	Linear Derating Factor	1.4	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	350	mJ
I_AR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
E_AR	Repetitive Avalanche Energy	See Fig.12a, 12b, 15, 16	mJ
dv/dt	Peak Diode Recovery dv/dt	TBD	V/ns
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

IRF1302L Features

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax

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