MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:SMD-8 D/C:04 05
IRF1381, IRF140, IRF1404 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: SMD-8
D/C: 04 05
Description: MOSFET N-CH 40V 202A TO-220AB
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF140
File Size: 57286 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF1404
File Size: 110040 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
ThisN-Channelenhancementmodesilicongatepower?eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speci?ed level of energyinthebreakdownavalanchemodeofoperation.Allof these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.
| IRF140 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 100 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 100 | V |
| Continuous Drain Current | ID | 28 | A |
| TC = 100 |
ID | 20 | A |
| Pulsed Drain Current (Note 3) | IDM | 110 | A |
| Gate to Source Voltage. | VGS | ±20 | V |
| Maximum Power Dissipation | PD | 150 | W |
| Linear Derating Factor | 1.0 | /W | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 100 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 175 | |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | |
| Package Body for 10s, see TB334 | Tpkg | 260 |
| Technical/Catalog Information | IRF1404 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 202A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 121A, 10V |
| Input Capacitance (Ciss) @ Vds | 5669pF @ 25V |
| Power - Max | 333W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 196nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF1404 IRF1404 |
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliabledevice for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter | Max. | Units | |
| ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 162 | A |
| ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 115 | |
| IDM | Pulsed Drain Current | 650 | |
| PD @ TC =100 | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 519 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 -55 to + 175 |
|
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
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