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Power MOSFETs from International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF1407L) is available for low- profile applications.
IRF1407S Maximum Ratings
Parameter
Max.
Units
ID @ TC =25
Continuous Drain Current,VGS @ 10V
100
A
ID @ TC =100
Continuous Drain Current,VGS @ 10V
70
IDM
Pulsed Drain Current
520
PD @ TC =25
Power Dissipation
3.8
W
PD @ TA =70
Power Dissipation
200
W
Linear Derating Factor
1.3
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
390
mJ
IAR
Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
IRF1407S Features
`Advanced Process Technology `Ultra Low On-Resistance `Dynamic dv/dt Rating `175 Operating Temperature `Fast Switching `Repetitive Avalanche Allowed up to Tjmax