Position: Home > DataSheet > Index I > IRF Series > IRF150, IRF1503, IRF1503L

Low Cost Custom Prototype PCB Manufacturer

IRF150, IRF1503, IRF1503L

Table of contents:
Info of IRF150
Info of IRF1503
Info of IRF1503L

IRF150, IRF1503, IRF1503L Selling Leads, Datasheet

MFG:IR D/C:05+

IRF150, IRF1503, IRF1503L Datasheet download

Five Points

Part Number: IRF150

MFG: IR

Package Cooled:

D/C: 05+

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

IRF150 Maximum Ratings

Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W..
Minimum resistance of 1ohm, +/-0.5% tolerance available.
10mm thickness allows excellent heat extrusion from resistor.

IRF150 Features

Narrower body (IRN) will be suitable for high density installation.
Light weight silicone filled insulation and higher temperature operating cement filled insulation are prepared.

IRF150 Typical Application

Strong over load characteristics are fit for applications of industrial power electronics, switching power supplies, braking resistors for motor control electronics, rush current protection in automotive electronics, industrial power supplies.

IRF1503 General Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1503 Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25	Continuous Drain Current, V_GS@ 10V (Silicon Limited)	240	A
I_D @ T_C = 100	Continuous Drain Current, V_GS @ 10V (See Fig. 9)	170
I_D @ T_C = 25	Continuous Drain Current, V_GS @ 10V (Package Limited)	75
I_DM	Pulsed Drain Current	960
I_D@ T_C = 25	Power Dissipation	330	A
	Linear Derating Factor	2.2	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	510	mJ
E_AS (Tested )	Single Pulse Avalanche Energy Tested Value	980	mJ
I_AR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
E_AR	Repetitive Avalanche Energy	See Fig.12a, 12b, 15, 16	mJ
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

IRF1503 Features

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax

IRF1503 Typical Application

·14V Automotive Electrical Systems
·14V Electronic Power Steering

IRF1503L General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET^® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF1503L Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25	Continuous Drain Current, V_GS @ 10V(Silicon limited)	190	A
I_D @ T_C = 100	Continuous Drain Current, V_GS @ 10V(See Fig.9)	130
I_D @ T_C = 25	Continuous Drain Current, V_GS @ 10V (Package limited)	75
I_DM	Pulsed Drain Current	960
P_D @ T_C = 25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	510	mJ
E_AS (tested)	Single Pulse Avalanche Energy Tested Value	980	mJ
I_AR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
E_AR	Repetitive Avalanche Energy	See Fig.12a, 12b, 15, 16	mJ
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T_J= 25, L = 0.049mH R_G = 25, I_AS= 140A. (See Figure 12).
C_oss eff. is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80% V_DSS .
Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.

IRF1503L Typical Application

14V Automotive Electrical Systems
14V Electronic Power Steering

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components