IRF2308S, IRF231, IRF232 Selling Leads, Datasheet
MFG:IR Package Cooled:SOP-3.9-8P D/C:04+
IRF2308S, IRF231, IRF232 Datasheet download
Part Number: IRF2308S
MFG: IR
Package Cooled: SOP-3.9-8P
D/C: 04+
IRF2308S, IRF231, IRF232
- Table of contents:
Info of IRF2308S
Info of IRF231
Info of IRF232
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF231
PDF/DataSheet Download
Datasheet: IRF231
File Size: 71331 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRF232
PDF/DataSheet Download
Datasheet: IRF232
File Size: 71331 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
IRF231 General Description
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from ntegrated circuits.
Formerly developmental type TA17412.
IRF231 Maximum Ratings
| IRF230 |
IRF231 |
IRF232 | IRF33 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 200 | 150 | 200 | 150 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 200 | 150 | 200 | 150 | V |
| Continuous Drain Current | ID | 9.0 | 9.0 | 8.0 | 8.0 | A |
| TC = 100 |
ID | 6.0 | 6.0 | 5.0 | 5.0 | A |
| Pulsed Drain Current (Note 3) | IDM | 36 | 36 | 32 | 32 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 150 | 150 | 150 | 150 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, see TB334 | Tpkg | 260 | 260 | 260 | 260 |
IRF231 Features
`8.0A and 9.0A, 150V and 200V
`rDS(ON)= 0.4and 0.6
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Related Literature
-TB334 Guidelines for Soldering Surface Moun
Components to PC Boards
`rDS(ON)= 0.4and 0.6
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Related Literature
-TB334 Guidelines for Soldering Surface Moun
Components to PC Boards
IRF232 General Description
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from ntegrated circuits.
Formerly developmental type TA17412.
IRF232 Maximum Ratings
| IRF230 |
IRF231 |
IRF232 | IRF33 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 200 | 150 | 200 | 150 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 200 | 150 | 200 | 150 | V |
| Continuous Drain Current | ID | 9.0 | 9.0 | 8.0 | 8.0 | A |
| TC = 100 |
ID | 6.0 | 6.0 | 5.0 | 5.0 | A |
| Pulsed Drain Current (Note 3) | IDM | 36 | 36 | 32 | 32 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 150 | 150 | 150 | 150 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, see TB334 | Tpkg | 260 | 260 | 260 | 260 |
IRF232 Features
`8.0A and 9.0A, 150V and 200V
`rDS(ON)= 0.4and 0.6
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Related Literature
-TB334 Guidelines for Soldering Surface Moun
Components to PC Boards
`rDS(ON)= 0.4and 0.6
`Single Pulse Avalanche Energy Rated
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Related Literature
-TB334 Guidelines for Soldering Surface Moun
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