MFG:IOR Package Cooled:SMD-8 D/C:05+
MFG: IOR
Package Cooled: SMD-8
D/C: 05+
MFG: IR Package Cooled: SOP-3.9-8P D/C: 07+ Qty: 33708
RU CHEN (HK) ELECTRONICS COMPANY 
Tel: 86-0754-84479727
Adddate: 2010-03-19
MFG: IOR Package Cooled: SMD-8 D/C: 04 05 Qty: 735
ShenZhen Kai Feng Electronics Co.,LTD. 
Tel: 0086-755-88357225
Adddate: 2010-03-19
MFG: IOR Package Cooled: 06+ D/C: 20000
HONGCHUANGXING ELECTRONICS CO.LTD 
Tel: 86-86-33279575
Adddate: 2010-03-19
MFG: ST Qty: 5000 Note: ECRAI@MSN.COM
HitSem International Electronics Company Limited 
Tel: 86-755-61329020
Adddate: 2010-03-19
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-19
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-19
MFG: IR Package Cooled: 06+ D/C: SO-8 Qty: 38000 Note: new in stock
Tel: 86-760-88228528
Adddate: 2010-03-19
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
MFG: IR\MOT Package Cooled: TO-3 D/C: 07+ Qty: 23750
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-19
MFG: IR Package Cooled: N/A D/C: N/A Qty: 100 Note: New & Original/stock
SHENZHEN MINGJIADA ELECTRONICS CO.,LTD 
Tel: 86-0755-83957301
Adddate: 2010-03-19
MFG: N/A Package Cooled: 03+ D/C: TO-3 Qty: 600
Tel: 86-755-8279-1230
Adddate: 2010-03-19
MFG: IR/HAR Package Cooled: TO-3 Qty: 375
Tel: 86-755-82722885
Adddate: 2010-03-19
MFG: IR Package Cooled: TO-3 D/C: 03+ Qty: 2000
Tel: 86-755-8279-9256
Adddate: 2010-03-19
MFG: IR Package Cooled: TO-3 Qty: 540 Note: Delivery
Golden Harbour Industry Limited 
Tel: 86-755-83651739,83041561
Adddate: 2010-03-19
MFG: IR Package Cooled: 18280 D/C: TO-3
Tel: 86-755-83958497
Adddate: 2010-03-19
MFG: IR Package Cooled: 金封 D/C: 05+ Qty: 1000 Note: new and original stock!
Minshunxin Electronics Co.,LTD. 
Tel: 86-755-82579485
Adddate: 2010-03-19
PDF/DataSheet Download
Datasheet: IRF232
File Size: 71331 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
MFG: IR\MOT Package Cooled: TO-3 D/C: 07+ Qty: 23750
Contact: Ms.Jenny Fu/George Ming
Tel: 86-755-8268-6456/8268-6500
Adddate: 2010-03-19
MFG: IR Package Cooled: N/A D/C: N/A Qty: 100 Note: New & Original/stock
SHENZHEN MINGJIADA ELECTRONICS CO.,LTD 
Tel: 86-0755-83957301
Adddate: 2010-03-19
MFG: N/A Package Cooled: 03+ D/C: TO-3 Qty: 600
Tel: 86-755-8279-1230
Adddate: 2010-03-19
MFG: IR Package Cooled: TO-3 Qty: 387
Tel: 86-755-82722885
Adddate: 2010-03-19
MFG: IR Package Cooled: TO-3 D/C: 03+ Qty: 2000
Tel: 86-755-8279-9256
Adddate: 2010-03-19
MFG: N/A Package Cooled: NA/ D/C: 09+ Qty: 5864
Tel: 86-755-8288-4268
Adddate: 2010-03-19
MFG: IR Package Cooled: TO-3 Qty: 540 Note: Delivery
Golden Harbour Industry Limited 
Tel: 86-755-83651739,83041561
Adddate: 2010-03-19
MFG: N/A Package Cooled: N/A D/C: 08+09+ Qty: 2669 Note: STOCK
Tel: 86-755-8288-4368
Adddate: 2010-03-19
PDF/DataSheet Download
Datasheet: IRF231
File Size: 71331 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from ntegrated circuits.
Formerly developmental type TA17412.
| IRF230 |
IRF231 |
IRF232 | IRF33 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 200 | 150 | 200 | 150 | V |
| Drain to Gate Voltage (RGS = 20kΩ)(Note 1) |
VDGR | 200 | 150 | 200 | 150 | V |
| Continuous Drain Current | ID | 9.0 | 9.0 | 8.0 | 8.0 | A |
| TC = 100℃ |
ID | 6.0 | 6.0 | 5.0 | 5.0 | A |
| Pulsed Drain Current (Note 3) | IDM | 36 | 36 | 32 | 32 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/℃ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 150 | 150 | 150 | 150 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | ℃ |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | ℃ |
| Package Body for 10s, see TB334 | Tpkg | 260 | 260 | 260 | 260 | ℃ |
·8.0A and 9.0A, 150V and 200V
·rDS(ON)= 0.4Ωand 0.6Ω
·Single Pulse Avalanche Energy Rated
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Related Literature
-TB334 Guidelines for Soldering Surface Moun
Components to PC Boards
These are N-Channel enhancement mode silicon gate powereld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci?ed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from ntegrated circuits.
Formerly developmental type TA17412.
| IRF230 |
IRF231 |
IRF232 | IRF33 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 200 | 150 | 200 | 150 | V |
| Drain to Gate Voltage (RGS = 20kΩ)(Note 1) |
VDGR | 200 | 150 | 200 | 150 | V |
| Continuous Drain Current | ID | 9.0 | 9.0 | 8.0 | 8.0 | A |
| TC = 100℃ |
ID | 6.0 | 6.0 | 5.0 | 5.0 | A |
| Pulsed Drain Current (Note 3) | IDM | 36 | 36 | 32 | 32 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/℃ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 150 | 150 | 150 | 150 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | ℃ |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | ℃ |
| Package Body for 10s, see TB334 | Tpkg | 260 | 260 | 260 | 260 | ℃ |
·8.0A and 9.0A, 150V and 200V
·rDS(ON)= 0.4Ωand 0.6Ω
·Single Pulse Avalanche Energy Rated
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Related Literature
-TB334 Guidelines for Soldering Surface Moun
Components to PC Boards