IRF235, IRF236, IRF237 Selling Leads, Datasheet
MFG:IR D/C:05+
IRF235, IRF236, IRF237
- Table of contents:
Info of IRF235
Info of IRF236
Info of IRF237
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About IRF235
PDF/DataSheet Download
Datasheet: IRF235
File Size: 70805 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About IRF236
PDF/DataSheet Download
Datasheet: IRF236
File Size: 70805 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About IRF237
PDF/DataSheet Download
Datasheet: IRF237
File Size: 70805 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
IRF235 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17413.
IRF235 Maximum Ratings
| IRF234 |
IRF235 |
IRF236 | IRF237 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 250 | 250 | 275 | 275 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 250 | 250 | 275 | 275 | V |
| Continuous Drain Current | ID | 8.1 | 6.5 | 8.1 | 6.5 | A |
| TC = 100 |
ID | 5.1 | 4.1 | 5.1 | 4.1 | A |
| Pulsed Drain Current (Note 3) | IDM | 32 | 26 | 32 | 26 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 180 | 180 | 180 | 180 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, See Techbrief 334 | Tpkg | 260 | 260 | 260 | 260 |
IRF235 Features
• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
IRF236 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17413.
IRF236 Maximum Ratings
| IRF234 |
IRF235 |
IRF236 | IRF237 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 250 | 250 | 275 | 275 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 250 | 250 | 275 | 275 | V |
| Continuous Drain Current | ID | 8.1 | 6.5 | 8.1 | 6.5 | A |
| TC = 100 |
ID | 5.1 | 4.1 | 5.1 | 4.1 | A |
| Pulsed Drain Current (Note 3) | IDM | 32 | 26 | 32 | 26 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 180 | 180 | 180 | 180 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, See Techbrief 334 | Tpkg | 260 | 260 | 260 | 260 |
IRF236 Features
• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
IRF237 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17413.
IRF237 Maximum Ratings
| IRF234 |
IRF235 |
IRF236 | IRF237 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 250 | 250 | 275 | 275 | V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VDGR | 250 | 250 | 275 | 275 | V |
| Continuous Drain Current | ID | 8.1 | 6.5 | 8.1 | 6.5 | A |
| TC = 100 |
ID | 5.1 | 4.1 | 5.1 | 4.1 | A |
| Pulsed Drain Current (Note 3) | IDM | 32 | 26 | 32 | 26 | A |
| Gate to Source Voltage. | VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation | PD | 75 | 75 | 75 | 75 | W |
| Linear Derating Factor | 0.6 |
0.6 |
0.6 | 0.6 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 180 | 180 | 180 | 180 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | |
| Maximum Temperature for Soldering | ||||||
| Leads at 0.063in (1.6mm) from case for 10s | TL | 300 | 300 | 300 | 300 | |
| Package Body for 10s, See Techbrief 334 | Tpkg | 260 | 260 | 260 | 260 |
IRF237 Features
• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.45W and 0.68W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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