MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:new
IRF3205ZL, IRF3205ZPBF, IRF3205ZS Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-262
D/C: new
Description: MOSFET N-CH 55V 75A TO-220AB
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Datasheet: IRF3205ZL
File Size: 310856 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF3205ZS
File Size: 310856 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 110 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 78 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 440 | |
| PD @ TC = 25 | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy | 180 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 250 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRF3205ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 66A, 10V |
| Input Capacitance (Ciss) @ Vds | 3450pF @ 25V |
| Power - Max | 170W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3205ZPBF IRF3205ZPBF |
Specifically designed for Automotive applications this HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
110 |
A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V |
78 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) |
75 | |
| IDM | Pulsed Drain Current |
440 | |
| PD @TC= 25 | Power Dissipation |
170 |
W |
| Linear Derating Factor |
1.1 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
180 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
250 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 110 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 78 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 440 | |
| PD @ TC = 25 | Power Dissipation | 170 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS(Thermally limited) | Single Pulse Avalanche Energy | 180 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 250 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
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