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Advanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520VL) is available for low-profile applications.
IRF520VSPBF Maximum Ratings
Parameter
Max.
Units
ID @ TA=25
Continuous Drain Current, VGS @ 10V
9.6
A
ID @ TC=70
Continuous Drain Current, VGS @ 10V
6.8
A
IDM
Pulsed Drain Current
37
A
PD @ TC=25
Power Dissipation
44
W
Linear Derating Factor
0.29
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
9.2
A
EAR
Repetitive Avalanche Energy
4.4
mJ
dv/dt
Peak Diode Recovery dv/dt
7.0
V/ns
Tj
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range Soldering Temperature, for 10 seconds
-55 to +175
Mounting torque, 6-32 or M3 srew
300 (1.6mm from case )
IRF520VSPBF Features
·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated ·Optimized for SMPS Applications ·Lead-Free
IRF5210 Parameters
Technical/Catalog Information
IRF5210
Vendor
International Rectifier
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
P-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
40A
Rds On (Max) @ Id, Vgs
60 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds
2700pF @ 25V
Power - Max
200W
Packaging
Bulk
Gate Charge (Qg) @ Vgs
180nC @ 10V
Package / Case
TO-220-3 (Straight Leads)
FET Feature
Standard
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IRF5210 IRF5210
IRF5210 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRF5210 Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-40
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-29
IDM
Pulsed Drain Current
-140
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
780
mJ
IAR
Avalanche Current
-21
A
EAR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T J TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 lbf*in (1.1N*m)
IRF5210 Features
·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv/dt Rating · 175°C Operating Temperature ·Fast Switching · P-Channel ·Fully Avalanche Rated