IRF614B, IRF614S, IRF615 Selling Leads, Datasheet
MFG:FSC Package Cooled:TO-220 D/C:TO-220
IRF614B, IRF614S, IRF615 Datasheet download
Part Number: IRF614B
MFG: FSC
Package Cooled: TO-220
D/C: TO-220
IRF614B, IRF614S, IRF615
- Table of contents:
Info of IRF614B
Info of IRF614S
Info of IRF615
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About IRF614B
PDF/DataSheet Download
Datasheet: IRF614B
File Size: 875973 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRF614S
PDF/DataSheet Download
Datasheet: IRF614S
File Size: 178423 KB
Manufacturer:
Download : Click here to Download
About IRF6150
PDF/DataSheet Download
Datasheet: IRF6150
File Size: 121003 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRF614B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
IRF614B Maximum Ratings
| Symbol | Parameter | IRF610B | IRFS610B | Units | |
| VDSS | Drain-Source Voltage | 250 | V | ||
| ID | Drain Current | - Continuous (TC = 25°C) | 2.8 | 2.8 * | A |
| - Continuous (TC = 100°C) | 1.8 | 1.8* | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 8.5 | 8.5* | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | ||
| EAS | Single Pulsed Avalanche Energy (Note 2) | 45 | mJ | ||
| IAR | Avalanche Current (Note 1) | 2.8 | A | ||
| EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ | ||
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | ||
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
40 | 22 | W | |
| 0.32 | 0.18 | W/°C | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | ||
* Drain current limited by maximum junction temperature.
IRF614B Features
• 2.8A, 250V, RDS(on) = 2.0 @VGS = 10 V
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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