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IRF630FP, IRF630M, IRF630MF

Table of contents:
Info of IRF630FP
Info of IRF630M
Info of IRF630MF

IRF630FP, IRF630M, IRF630MF Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 ISO FULL PACK IN LINE D/C:08+/09+

IRF630FP, IRF630M, IRF630MF Datasheet download

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Part Number: IRF630FP

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 220 ISO FULL PACK IN LINE

D/C: 08+/09+

Description: MOSFET N-CH 200V 9A TO-220FP

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IRF630FP Parameters

Technical/Catalog Information	IRF630FP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-220FP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF630FP IRF630FP

IRF630FP General Description

This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

IRF630FP Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	IRF630	IRF630FP	Unit
V_DS	Collector-Source Voltage (V_GS = 0 V)	200		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	200		V
V_GS	Gate-Source Voltage	±20		V
I_D	Drain Current (continuous) at T_C = 25	9	9^(**)	A
I_D	Drain Current (continuous) at T_C = 100	5.7	5.7^(**)	A
I_DM(`)	Drain Current (pulsed)	36	36	A
P_tot	Total Dissipation at T_C= 25	75	25	W
	Derating Factor	0.6	0.20	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5	5	V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2000	V
T_stg	Storage Temperature	-60 to 150
T_j	Operating Junction Temperature	150

(•) Pulse width limited by safe operating area
( 1) I_SD 9A, di/dt 300 A/ms, V_DD V_(BR)DSS, T_jT_JMAXFirst Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed

IRF630FP Features

` TYPICAL R_DS(on) = 0.35
` EXTREMELY HIGH dV/dt CAPABILITY
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED

IRF630FP Typical Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRF630M General Description

This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.

Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB's.

IRF630M Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	IRF630M	IRF630MFP	Unit
V_DS	Collector-Source Voltage (V_GS = 0 V)	200		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	200		V
V_GS	Gate-Source Voltage	±20		V
I_D	Drain Current (continuous) at T_C = 25	9	9^(**)	A
I_D	Drain Current (continuous) at T_C = 100	5.7	5.7^(**)	A
I_DM(`)	Drain Current (pulsed)	36	36	A
P_tot	Total Dissipation at T_C= 25	75	30	W
	Derating Factor	0.6	0.24	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5	5	V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	-60 to 150
T_j	Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD9A, di/dt300A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(**) Limited only by Maximum Temperature Allowed

IRF630M Features

` TYPICAL R_DS(on) = 0.35
` EXTREMELY HIGH dv/dt CAPABILITY
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED

IRF630M Typical Application

· MONITOR DISPLAYS
· GENERAL PURPOSE SWITCH

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