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The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve thelowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatibleith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allowsdual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processorsoperating at higher frequencies. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12 voltbuss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
IRF6621 Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
30
V
VGS
Gate-to-Source Voltage
±20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
12
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
9.6
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
55
IDM
Pulsed Drain Current
96
EAS
Single Pulse Avalanche Energy
13
mJ
IAR
Avalanche Current
9.6
A
IRF6621 Features
` RoHs Compliant Containing No Lead and Bromide ` Low Profile (<0.7 mm) ` Dual Sided Cooling Compatible ` Ultra Low Package Inductance ` Optimized for High Frequency Switching ` Ideal for CPU Core DC-DC Converters ` Optimized for both Sync.FET and some Control FET pplication ` Low Conduction and Switching Losses ` Compatible with existing Surface Mount Techniques