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IRF7201, IRF7201A, IRF7201ATRPBF

Table of contents:
Info of IRF7201
Info of IRF7201A
Info of IRF7201ATRPBF

IRF7201, IRF7201A, IRF7201ATRPBF Selling Leads, Datasheet

MFG:IOR Package Cooled:SOP-8 D/C:04+

IRF7201, IRF7201A, IRF7201ATRPBF Picture

IRF7201, IRF7201A, IRF7201ATRPBF Datasheet download

Five Points

Part Number: IRF7201

MFG: IOR

Package Cooled: SOP-8

D/C: 04+

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IRF7201 General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

IRF7201 Maximum Ratings

	Parameter	Max.	Units
V_DS	Drain- Source Voltage	30	V
I_D @ T_C = 25	Continuous Drain Current, V_GS @ 10V	7.3	A
I_D @ T_C = 70	Continuous Drain Current, V_GS @ 10V	5.8
I_DM	Pulsed Drain Current	58
P_D @T_C = 25	Power Dissipation	2.5	W
P_D @T_C = 70	Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
V_GS	Gate-to-Source Voltage	± 20	V
V_GSM	Gate-to-Source Voltage Single Pulse tp<10µs	30	V
E_AS	Single Pulse Avalanche Energy	70	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 150

IRF7201 Features

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching

IRF7201 Connection Diagram

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