Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
IRF7205 Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-4.6
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-3.7
A
IDM
Pulsed Drain Current
-15
A
PD @TC = 25°C
Power Dissipation
2.5
W
Linear Derating Factor
0.022
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
-3.0
V/nS
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
IRF7205 Features
·Adavanced Process Technology ·Ultra Low On-Resistance ·P-Channel MOSFET ·Surface Mount · Available in Tape & Reel ·Dynamic dv/dt Rating ·Fast Switching