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IRF7207TRPBF, IRF720A, IRF720B

Table of contents:
Info of IRF7207TRPBF
Info of IRF720A
Info of IRF720B

IRF7207TRPBF, IRF720A, IRF720B Selling Leads, Datasheet

MFG:International Rectifier (VA) Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:08/09+

IRF7207TRPBF, IRF720A, IRF720B Datasheet download

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Part Number: IRF7207TRPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier (VA)

Package Cooled: SOP-8

D/C: 08/09+

Description: MOSFET P-CH 20V 5.4A 8-SOIC

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IRF7207TRPBF Parameters

Technical/Catalog Information	IRF7207TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.4A
Rds On (Max) @ Id, Vgs	60 mOhm @ 5.4A, 4.5V
Input Capacitance (Ciss) @ Vds	780pF @ 15V
Power - Max	2.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	22nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7207TRPBF IRF7207TRPBF IRF7207PBFDKR ND IRF7207PBFDKRND IRF7207PBFDKR

IRF720A Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	400	V
I_D	Continuous Drain Current (T_C=25)	3.3	A
I_D	Continuous Drain Current (T_C=100)	2.1	A
I_DM	Drain Current-Pulsed (1)	13	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (2)	249	mJ
I_AR	Avalanche Current (1)	3.3	A
E_AR	Repetitive Avalanche Energy (1)	4.9	mJ
dv/dt	Peak Diode Recovery dv/dt (3)	4.0	V/ns
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	49 0.39	W W/
T_J, T_STG	Operating Junction and Storage Temperature Range	- 55 to +150
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds	300

IRF720A Features

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current: 10A (Max.) @ V_DS = 400V
` Lower R_DS(ON): 1.408 (Typ.)

IRF720B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

IRF720B Maximum Ratings

Symbol	Parameter	IRF720B	IRFS720B	Units
V_DSS	Drain-Source Voltage	400		V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	3.3	3.3 *	A
I_D		2.1	2.1 *	A
I_DM	Drain Current - Pulsed	13.2	13.2 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy	240		mJ
I_AR	Avalanche Current	3.3		A
E_AR	Repetitive Avalanche Energy	4.9		mJ
dv/dt	Peak Diode Recovery dv/dt	5.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	49	33	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.39	0.27	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

IRF720B Features

• 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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