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IRF7241TRPBF, IRF7280, IRF730

Table of contents:
Info of IRF7241TRPBF
Info of IRF7280
Info of IRF730

IRF7241TRPBF, IRF7280, IRF730 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:06+

IRF7241TRPBF, IRF7280, IRF730 Datasheet download

Five Points

Part Number: IRF7241TRPBF

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOP8

D/C: 06+

Description: MOSFET N-CH 400V 5.5A TO-220

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IRF7241TRPBF Parameters

Technical/Catalog Information	IRF7241TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	41 mOhm @ 6.2A, 10V
Input Capacitance (Ciss) @ Vds	3220pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7241TRPBF IRF7241TRPBF IRF7241PBFCT ND IRF7241PBFCTND IRF7241PBFCT

IRF730 Parameters

Technical/Catalog Information	IRF730
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	-
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF730 IRF730 497 2736 5 ND 49727365ND 497-2736-5

IRF730 General Description

This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17414.

IRF730 Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . .. . . .VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
   TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
   Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . .. .. . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
   Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .. . . . . . . . ... . . . .TL
   Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . .. . . .. . . . Tpkg

IRF730 Features

• 5.5A, 400V
• r_DS(ON) = 1.000
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"

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