MFG:International Rectifier (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:07+
IRF7301TRPBF, IRF7302, IRF7303 Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier (VA)
Package Cooled: SOP8
D/C: 07+
Description: MOSFET 2N-CH 20V 5.2A 8-SOIC
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF7303
File Size: 113913 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRF7301TRPBF |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.2A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 2.6A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 15V |
| Power - Max | 2W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7301TRPBF IRF7301TRPBF IRF7301PBFCT ND IRF7301PBFCTND IRF7301PBFCT |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
| Parameter | Max. | Units | |
| ID @ TA = 25 | 10 Sec. Pulsed Drain Current, VGS @ 10V | 5.3 | A |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 4.9 | |
| ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 3.9 | |
| IDM | Pulsed Drain Current | 20 | |
| PD @TA = 25 | Power Dissipation | 2.0 | W |
| Linear Derating Factor | 0.016 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |
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