IRF730AS, IRF730B, IRF730FI Selling Leads, Datasheet
MFG:IR Package Cooled:. D/C:06+
IRF730AS, IRF730B, IRF730FI Datasheet download
Part Number: IRF730AS
MFG: IR
Package Cooled: .
D/C: 06+
IRF730AS, IRF730B, IRF730FI
- Table of contents:
Info of IRF730AS
Info of IRF730B
Info of IRF730FI
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About IRF730AS
PDF/DataSheet Download
Datasheet: IRF730AS
File Size: 152598 KB
Manufacturer:
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About IRF730B
PDF/DataSheet Download
Datasheet: IRF730B
File Size: 920139 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRF730AS Maximum Ratings
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V† |
5.5 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V† |
3.5 | |
|
IDM |
Pulsed Drain Current † |
22 | |
|
PD @TC = 25°C |
Power Dissipation |
74 |
W |
| Linear Derating Factor |
0.6 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
± 30 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt Ġ |
4.6 |
V/ns |
|
TJ |
Operating Junction and |
-55 to + 150 |
°C |
|
TSTG |
Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRF730AS Typical Application
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High speed power switching
Uninterruptable Power Supply
High speed power switching
IRF730B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
IRF730B Maximum Ratings
| Symbol | Parameter | IRF730B | IRFS730B | Units |
| VDSS | Drain-Source Voltage | 400 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
5.5 | 5.5 * | A |
| 3.5 | 3.5 * | A | ||
| IDM | Drain Current - Pulsed | 22 | 22 * | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy | 330 | mJ | |
| IAR | Avalanche Current | 5.5 | A | |
| EAR | Repetitive Avalanche Energy | 7.3 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
73 | 38 | W |
| 0.58 | 0.3 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
IRF730B Features
• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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