MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+
IRF740ASPBF, IRF740B, IRF740D Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 09+
Description: MOSFET N-CH 400V 10A TO-220
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF740B
File Size: 916283 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRF740B |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 134W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF740B IRF740B |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
| Symbol | Parameter | IRF730B | IRFS730B | Units |
| VDSS | Drain-Source Voltage | 400 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
10 | 10 * | A |
| 6.3 | 6.3 * | A | ||
| IDM | Drain Current - Pulsed | 40 | 40 * | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy | 450 | mJ | |
| IAR | Avalanche Current | 10 | A | |
| EAR | Repetitive Avalanche Energy | 13.4 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
134 | 44 | W |
| 1.08 | 0.35 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
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