IRF820APBF, IRF820AS, IRF820B Selling Leads, Datasheet
MFG:IR Package Cooled:TO220 D/C:dc0446
IRF820APBF, IRF820AS, IRF820B Datasheet download
Part Number: IRF820APBF
MFG: IR
Package Cooled: TO220
D/C: dc0446
IRF820APBF, IRF820AS, IRF820B
- Table of contents:
Info of IRF820APBF
Info of IRF820AS
Info of IRF820B
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF820AS
PDF/DataSheet Download
Datasheet: IRF820AS
File Size: 136790 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF820B
PDF/DataSheet Download
Datasheet: IRF820B
File Size: 879029 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
IRF820APBF Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Continuous Drain Current, VGS @ -10V,Tc = 25 | ID | 2.5 | A |
| Continuous Drain Current, VGS @ -10V,Tc = 100 | ID | 1.6 | A |
| Pulsed Drain Current*1 | IDM | 10 | A |
| Power Dissipation Tc = 25 | PD | 50 | W |
| Linear Derating Factor | 0.4 | /W | |
| Gate-to-Source Voltage | VGS | ±30 | V |
| Peak Diode Recovery dv/dt *2 | dv/dt | 3.4 | V/ns |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 150 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torqe, 6-32 or M3 screw | 10 lbf.in (1.1N.m) | ||
IRF820APBF Typical Application
· Switch Mode Power Supply (SMPS)
· Uninterruptable Power Supply
· High speed power switching
· Lead-Free
· Uninterruptable Power Supply
· High speed power switching
· Lead-Free
IRF820AS Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 2 | Continuous Drain Current, VGS @ 10V | 2.5 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 1.6 | |
| IDM | Pulsed Drain Current | 10 | |
| PD @TC = 25 | Power Dissipation | 50 | W |
| Linear Derating Factor | 0.4 |
W/ | |
| VGS | Gate-to-Source Voltage | ± 30 | V |
| dv/dt | Peak Diode Recovery dv/dt | 3.4 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torqe, 6-32 or M3 screw | 10 lbf•in (1.1N•m) |
IRF820AS Features
·Low Gate Charge Qg Results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective COSS specified (See AN 1001)
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective COSS specified (See AN 1001)
IRF820AS Typical Application
·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High speed power switching
·Uninterruptable Power Supply
·High speed power switching
IRF820B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
IRF820B Maximum Ratings
| Symbol | Parameter | IRF820B | IRF820B | Units |
| VDSS | Drain-Source Voltage | 500 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
2.5 | 2.5* | A |
| 1.6 | 1.6* | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 8.0 | 8.0* | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 200 | mJ | |
| IAR | Avalanche Current (Note 1) | 2.5 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 4.9 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
49 | 33 |
W |
| 0.39 | 0.27 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds |
300 | ||
IRF820B Features
• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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