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IRF830, IRF830A, IRF830AL

IRF830, IRF830A, IRF830AL Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:TO-220  D/C:05+

IRF830 Picture

IRF830, IRF830A, IRF830AL Datasheet download

Five Points

Part Number: IRF830

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-220

D/C: 05+

Description: MOSFET N-CH 500V 4.5A TO-220

 

 
 
 
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  • Vendor: IR Pack: TO Qty: 5000  Adddate: 2026-06-18
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About IRF830

PDF/DataSheet Download

Datasheet: IRF830

File Size: 41409 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • IRF830A

  • Pack: TO Qty: 5000  Adddate: 2026-06-18
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  • Abenic   China
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  • IRF830A

  • Pack: TO  Adddate: 2026-06-18
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  • Pu Hai Electronics   China
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  • IRF830ASTRPBF

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About IRF830A

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Datasheet: IRF830A

File Size: 144887 KB

Manufacturer: VAISH [Vaishali Semiconductor]

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  • IRF034

  • Vendor: IR Pack: TO D/C: 00+& Qty: 1000 Note: New arrival goods,original in stock  Adddate: 2026-06-18
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  • Shantou Chongsheng Electronics Co., Ltd   China
    Contact: Mr.Jackies http://importexportchina.wikispaces.com/Lin http://chinaimportexport.wikispaces.com/   MSN:chongxonexports@hotmail.com
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    Fax: 86-020-86270358
    (0)

About IRF830AL

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Datasheet: IRF830AL

File Size: 158825 KB

Manufacturer: IRF [International Rectifier]

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IRF830 Parameters

Technical/Catalog InformationIRF830
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 2.7A, 10V
Input Capacitance (Ciss) @ Vds 610pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF830
IRF830
497 2732 5 ND
49727325ND
497-2732-5

IRF830 General Description

The Bay Linear MOSFET's provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.

The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts

IRF830 Maximum Ratings

  Parameter Max. Units
ID @ TC = 2 Continuous Drain Current, VGS @ 10V 2.5 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 1.6
IDM Pulsed Drain Current (1) 10
PD @TC = 25 Power Dissipation 50 W
  Linear Derating Factor 0.4
W/
  Linear Derating Factor ( PCB Mount, D2 ) (1) 0.025
VGS Gate-to-Source Voltage ± 30 V
EAS Single Pulse Avalanche Energy (2) 280 mJ
IAR Avalanche Current (1) 4.5 A
EAR Repetitive Avalanche Energy (1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (3) 3.4 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF830 Features

·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·Fast Switching
·Ease of Paralleling
·Simple Drive Requirements

IRF830A Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.0 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.2
IDM Pulsed Drain Current 20
PD @TC = 25°C Power Dissipation 74 W
  Linear Derating Factor 0.59 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torqe, 6-32 or M3 screw 10 lbf?in (1.1N?m)  

IRF830A Typical Application

·Switch Mode Power Supply ( SMPS )
·Uninterruptable Power Supply
·High speed power switching

IRF830A Connection Diagram

IRF830AL Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 5.0 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 3.2
IDM Pulsed Drain Current 20
PD @ TA= 25 Power Dissipation 3.1 W
ID @ TC = 100 Power Dissipation 74  
  Linear Derating Factor 0.59
W/
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJ
Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 secondss
300 (1.6mm from case )

IRF830AL Features

·Low Gate Charge Qg Results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective Coss specified (See AN 1001)

IRF830AL Typical Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High Speed Power Switching

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