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The Bay Linear MOSFET's provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts
·Switch Mode Power Supply ( SMPS ) ·Uninterruptable Power Supply ·High speed power switching
IRF830A Connection Diagram
IRF830AL Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current, VGS @ 10V
5.0
A
ID @ TC = 100
Continuous Drain Current, VGS @ 10V
3.2
IDM
Pulsed Drain Current
20
PD @ TA= 25
Power Dissipation
3.1
W
ID @ TC = 100
Power Dissipation
74
Linear Derating Factor
0.59
W/
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
5.3
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range Soldering Temperature, for 10 secondss
300 (1.6mm from case )
IRF830AL Features
·Low Gate Charge Qg Results in Simple Drive Requirement ·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ·Fully Characterized Capacitance and Avalanche Voltage and Current ·Effective Coss specified (See AN 1001)
IRF830AL Typical Application
·Switch Mode Power Supply (SMPS) ·Uninterruptable Power Supply ·High Speed Power Switching