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IRF830APBF, IRF830AS, IRF830ASPBF

Table of contents:
Info of IRF830APBF
Info of IRF830AS
Info of IRF830ASPBF

IRF830APBF, IRF830AS, IRF830ASPBF Selling Leads, Datasheet

MFG:INQUIRY Package Cooled:10000 D/C:07+

IRF830APBF, IRF830AS, IRF830ASPBF Picture

IRF830APBF, IRF830AS, IRF830ASPBF Datasheet download

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Part Number: IRF830APBF

MFG: INQUIRY

Package Cooled: 10000

D/C: 07+

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IRF830APBF Maximum Ratings

	Parameter		Unit
I_D @ V_GS = 10V,T_C = 25	Continuous Drain Current	5.0	A
I_D @ V_GS= 10V,T_C = 100	Continuous Drain Current	3.2	A
I_DM	Pulsed Drain Current	20	A
P_D @ T_C = 25	Max. Power Dissipation	74	W
	Linear Derating Factor	2.59	W/
V_GS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	5.3	V/ns
T_JT_STG	Operating Junction Storage Temperature Range	-55 to 150
	Pckg. Mounting Surface Temp.	300 (1.6mm from case )
	Weight	10 lbf`in (1.1N`m)	g

IRF830APBF Typical Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High speed power switching
· Lead-Free

IRF830AS Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25	Continuous Drain Current, VGS @ 10V	5.0	A
I_D @ T_C = 100	Continuous Drain Current, VGS @ 10V	3.2
I_DM	Pulsed Drain Current	20
P_D@ T_A= 25	Power Dissipation	3.1	W
I_D @ T_C = 100	Power Dissipation	74
	Linear Derating Factor	0.59	W/
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	5.3	V/ns
T_J	Operating Junction and	-55 to + 150
T_STG	Storage Temperature Range Soldering Temperature, for 10 secondss	300 (1.6mm from case )

IRF830AS Features

·Low Gate Charge Qg Results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective Coss specified (See AN 1001)

IRF830AS Typical Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High Speed Power Switching

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