IRFC034R, IRFC044, IRFC044R Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:N/A
IRFC034R, IRFC044, IRFC044R Datasheet download

Part Number: IRFC034R
MFG: IR
Package Cooled: N/A
D/C: N/A
MFG:IR Package Cooled:N/A D/C:N/A
IRFC034R, IRFC044, IRFC044R Datasheet download

MFG: IR
Package Cooled: N/A
D/C: N/A
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFC044
File Size: 34186 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IRFC044 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 60V Min.,the test conditions is VGS=0V,ID=100A.When parameter is RDS(on),the description is static drain-to-source on-resistance,the guaranteed (Min/Max) is 0.034Max.,the test conditions is VGS=10V,ID=5.0A.When parameter is VGS(th),the description is gate threshold voltage,the guaranteed (Min/Max) is 2.1V Min.,the test conditions is VDS=5.0V,ID=250A.When parameter is IDSS,the description is drain-to-source leakage current,the guaranteed (Min/Max) is 100A Max.,the test conditions is VDS=60V,VGS=0V,TJ=25.When parameter is IGSS,the description is gate-to-source leakage,the guaranteed (Min/Max) is ±10A Max.,the test conditions is VGS=±20V.When parameter is TJ,TSTG,the description is operating junction and storage temperature range,the guaranteed (Min/Max) is 125 Max.
The IRFC044 has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag( 1kA°-2kA°-2.5kA° ).The nominal front metal composition,thickness is 99% Al, 1% Si (0.004mm).The chip dimensions is 0.170" x 0.180" .The wafer diameter is 125mm,with 100 flat.The wafer thickness is 0.375mm+/-0.020mm.The relevant die mechanical dwg. number is 01-5018.The minimum street width is 0.084mm.The reject ink dot size is 0.51 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.The recommended die attach conditions is for optimum electrical results, die attach temperature should not exceed 300C.
