IRFE220, IRFE230, IRFE30 Selling Leads, Datasheet
MFG:IR Package Cooled:18-pin LCC D/C:00+
IRFE220, IRFE230, IRFE30 Datasheet download

Part Number: IRFE220
MFG: IR
Package Cooled: 18-pin LCC
D/C: 00+
MFG:IR Package Cooled:18-pin LCC D/C:00+
IRFE220, IRFE230, IRFE30 Datasheet download

MFG: IR
Package Cooled: 18-pin LCC
D/C: 00+
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PDF/DataSheet Download
Datasheet: IRFE220
File Size: 241326 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFE230
File Size: 27417 KB
Manufacturer: SEME-LAB [Seme LAB]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference.
|
Parameter |
IRFE310,JANTX-,JANTXV2N6786U |
Units | |
|
Continuous Drain Current |
ID @ VGS = 10V, TC = 25°C |
2.8 |
V
|
|
Continuous Drain Current |
ID @ VGS = 10V, TC = 100°C |
1.8 | |
|
Pulsed Drain Current Å |
IDM |
1811 | |
|
Max. Power Dissipation |
PD @ TC = 25°±25 |
14 |
WmA |
|
Linear Derating Factor |
0.11 |
W/°C | |
|
Gate-to-Source Voltage |
VGS |
±20 |
V |
|
Single Pulse Avalanche Energy Ç |
EAS |
7.0 |
mJmW |
|
Surface Temperature |
EAR |
300 (for 5 S) stg |
V/ns°C |
|
Pckg. Mounting Surface Temp. |
dv/dt |
5.5 |
V/ns |
|
Operating Junction Storage Temperature Range |
TJ TSTG |
-55 to 150 |
o C |
|
Avalanche Current ➀ |
300 (for 5 S) | ||
|
Repetitive Avalanche Energy ➀ |
0.42(typical) |
g |
| VGS ID ID IDM PD EAS dv/dt TJ , Tstg |
Gate Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25°C) Continuous Drain Current (VGS = 10V , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Surface Temperature ( for 5 sec). |
±20V 4.8A 3.1A 19A 22W 0.17W/°C 54mJ 4.5V/ns -55 to +150°C 300°C |
