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IRFN3710, IRFN440, IRFN48N50

Table of contents:
Info of IRFN3710
Info of IRFN440
Info of IRFN48N50

IRFN3710, IRFN440, IRFN48N50 Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

IRFN3710, IRFN440, IRFN48N50 Datasheet download

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Part Number: IRFN3710

MFG: IR

Package Cooled: N/A

D/C: 2010+

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IRFN3710 General Description

100 Volt, 0.028W, HEXFET
    Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

    This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

    The Surface Mount Device 1 (SMD-1) package represents anothther step in the continual evolution of surface mount technology. Designed to be a close replacement for the TO-3 package, the SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electical performance.

IRFN3710 Maximum Ratings

	Parameter	IRFN3710	Units
ID @ V_GS= 10V, T_C = 25°C	Continuous Drain Current	45	A
I_D @ V_GS = 10V, T_C = 100°C	Continuous Drain Current	28
I_DM	Pulsed Drain Current	120
P_D @ T_C= 25°C	Max. Power Dissipation	125	W
	Linear Derating Factor	1.0	W/K
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	690	mJ
I_AR	Avalanche Current	27	A
E_AR	Repetitive Avalanche Energy	12.5	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150	^oC
	Package Mounting Surface Temperature	300 (for 5 sec.)	^oC
	Weight	2.6 (typical)	9

IRFN3710 Features

· Surface Mount
· Small Footprint
· Alternative to TO-3 Package
· Hermetically Sealed
· Avalanche Energy Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Lightweight

IRFN440 General Description

HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.

The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance.

IRFN440 Maximum Ratings

	Parameter	IRFN440	Units
ID @ V_GS= 10V, T_C = 25°C	Continuous Drain Current	8.0	A
I_D @ V_GS = 10V, T_C = 100°C	Continuous Drain Current	5.0
I_DM	Pulsed Drain Current	32
P_D @ T_C= 25°C	Max. Power Dissipation	125	W
	Linear Derating Factor	1.0	W/K
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	700	mJ
I_AR	Avalanche Current	8.0	A
E_AR	Repetitive Avalanche Energy	12.5	mJ
dv/dt	Peak Diode Recovery dv/dt	3.5	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150	^oC
	Package Mounting Surface Temperature	300 (for 5 sec.)	^oC
	Weight	2.6 (typical)	9

IRFN440 Features

· Avalanche Energy Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light-weight

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