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IRFP048, IRFP048N, IRFP048PBF

Table of contents:
Info of IRFP048
Info of IRFP048N
Info of IRFP048PBF

IRFP048, IRFP048N, IRFP048PBF Selling Leads, Datasheet

MFG:IR/HAR Package Cooled:TO-3P D/C:TO-247

IRFP048, IRFP048N, IRFP048PBF Datasheet download

Five Points

Part Number: IRFP048

MFG: IR/HAR

Package Cooled: TO-3P

D/C: TO-247

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IRFP048N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP048N Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	64	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	45
I_DM	Pulsed Drain Current	210
P_D @T_C= 25°C	Power Dissipation	140	W
	Linear Derating Factor	0.90	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	270	mJ
I_AR	Avalanche Current	32	A
E_AR	Repetitive Avalanche Energy	14	mJ
d_v/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

IRFP048N Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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