MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+/09+
IRFP140, IRFP1405, IRFP1405PBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-3P
D/C: 08+/09+
Description: MOSFET N-CH 55V 95A TO-247AC
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Datasheet: IRFP140
File Size: 75440 KB
Manufacturer: Intersil
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| IRFP140 | UNITS | ||
| Drain to Source Voltage (Note 1) | VDS | 100 | V |
| Drain to Gate Voltage (RGS = 20k) (Note 1) | VDGR | 100 | V |
| Continuous Drain Current | ID | 31 | A |
| TC = 100 | ID | 22 | A |
| Pulsed Drain Current (Note 3) | IDM | 120 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation | PD | 180 | W |
| Linear Derating Factor | 1.2 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 100 | mJ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s | TL | 300 | |
| Package Body for 10s, See Techbrief 334 | Tpkg | 260 |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Symbol | Parameter | Max. | Units |
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 160 | A |
| ID @ VGS = 12V, TC =100°C | Continuous Drain Current | 110 | A |
| IDM | Pulsed Drain Current | 95 | A |
| PD @ TV = 25 | Power Dissipation | 640 | W |
| Linear Derating Factor |
310 |
W/ | |
| VGS | Gate-to-Source Voltage | 2.0 | V |
| EAS | Single Pulse Avalanche Energy | ±20 | mJ |
| IAR | Avalanche Current | 530 | A |
| EAR | Repetitive Avalanche Energy | 1060 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | See Fig.12a, 12b, 15, 16 | V/ns |
| TJ, TSTG | Operating Junction Storage Temperature Range |
-55 to 150 |
| Technical/Catalog Information | IRFP1405PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 95A |
| Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 95A, 10V |
| Input Capacitance (Ciss) @ Vds | 5600pF @ 25V |
| Power - Max | 310W |
| Packaging | Bag |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP1405PBF IRFP1405PBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC=100 | Continuous Drain Current, VGS @ 10V | 110 | A |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V (Package Limited | 95 | |
| IDM | Pulsed Drain Current | 640 | A |
| PD @ TC=25 | Power Dissipation | 310 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 530 | mJ |
| EAS | Single Pulse Avalanche Energy Tested Value | 1060 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| Tj | Operating Junction and | -55 to +175 | |
| TSTG | Storage Temperature Range Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
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