IRFP250P, IRFP250R, IRFP254B Selling Leads, Datasheet
MFG:IR Package Cooled:TO-247 D/C:06+
IRFP250P, IRFP250R, IRFP254B Datasheet download
Part Number: IRFP250P
MFG: IR
Package Cooled: TO-247
D/C: 06+
IRFP250P, IRFP250R, IRFP254B
- Table of contents:
Info of IRFP250P
Info of IRFP250R
Info of IRFP254B
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFP254B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
IRFP254B Maximum Ratings
|
Symbol |
Parameter |
IRFP250B |
Units |
|
VDSS |
Drain-Source Voltage |
250 |
V |
|
ID |
Drain Current - Continuous (TC= 25) - Continuous (TC= 100) |
25 15.9 |
A A |
|
IDM VGSS EAS IAR EAR dv/dt |
Drain Current- Pulsed(Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy(Note 2) Avalanche Current(Note 1) Repetitive Avalanche Energy(Note 1) Peak Diode Recovery dv/dt(Note 3) |
100 ±30 700 25 22.1 1.79 |
A V mJ A mJ V/ns W |
|
PD |
Power Dissipation (TC= 25) - Derate above 25 |
221 1.79 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
IRFP254B Features
`25A, 250V, RDS(on) = 0.14 @VGS= 10 V
`Low gate charge ( typical 95 nC)
`Low Crss ( typical 60 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability
`Low gate charge ( typical 95 nC)
`Low Crss ( typical 60 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability
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