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IRFP360PBF, IRFP362, IRFP3703

Table of contents:
Info of IRFP360PBF
Info of IRFP362
Info of IRFP3703

IRFP360PBF, IRFP362, IRFP3703 Selling Leads, Datasheet

MFG:IR Package Cooled:IR D/C:07+

IRFP360PBF, IRFP362, IRFP3703 Datasheet download

Five Points

Part Number: IRFP360PBF

MFG: IR

Package Cooled: IR

D/C: 07+

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IRFP360PBF General Description

      The IRFP360PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
      It has seven features.The first one is that it would have dynamic dv/dt rating.The second one is that it would be repetitive avalanche rated.The third one is that it would have isolated central mounting hole.The fourth one is that it would have fast switching.The fifth one is that it would have ease of paralleling.The sixth one is that it would have simple drive requirements.The last one is that it would be lead free.That are all the features.
      Some absolute maximum ratings have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 23A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 14A.The third one is about its pulse drain current which would be 92A.The fourth one is about its power dissipation which would be 280W.The fifth one is about its linear derating factor which would be 2.2W/°C.The sixth one is about its gate-to source voltage which would be +/-20V.The seventh one is about its signal pulse avalanche energy which would be 1200mJ.The eighth one is about its peak diode recovery dv/dt which would be 4.0 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
      And also there are some electrical characteristics @ Tj=25°C (unless otherwise specified) about it.The first one is about its drain to source breakdown voltage which would be min 400V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.56V/°C.The third one is about its static drain to source on resistance which would be max 0.20 with condition of Vgs=10V, Id=14A.And so on.For more information please contact us.

IRFP360PBF Maximum Ratings

IRFP360PBF Features

IRFP3703 Maximum Ratings

	Parameter	Max.	Units
ID @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V …	210	A
ID @ T_C = 100°C	Continuous Drain Current, V_GS@ 10V …	100
I_DM	Pulsed Drain Current	1000
P_D @T_C = 25°C	Power Dissipation	230	W
P_D @T_A= 25°C	Power Dissipation	3.8	W
	Linear Derating Factor	1.5	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 175	°C

IRFP3703 Typical Application

·Synchronous Rectification
·Active ORing

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