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IRFP440, IRFP440A, IRFP440B

Table of contents:
Info of IRFP440
Info of IRFP440A
Info of IRFP440B

IRFP440, IRFP440A, IRFP440B Selling Leads, Datasheet

MFG:IR Package Cooled:TO-220 D/C:TO-247

IRFP440, IRFP440A, IRFP440B Datasheet download

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Part Number: IRFP440

MFG: IR

Package Cooled: TO-220

D/C: TO-247

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IRFP440 Maximum Ratings

		IRFP440	UNITS
Drain to Source Voltage (Note 1)	V_DS	500	V
Drain to Gate Voltage (R_GS = 20k) (Note 1)	V_DGR	500	V
Continuous Drain Current	I_D	8.8	A
TC = 100	I_D	5.6	A
Pulsed Drain Current (Note 3)	I_DM	35	A
Gate to Source Voltage	V_GS	±20	V
Maximum Power Dissipation	P_D	150	W
Linear Derating Factor		1.2	W/
Single Pulse Avalanche Energy Rating (Note 4)	E_AS	480	mJ
Operating and Storage Temperature	T_J, T_STG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	T_L	300
Package Body for 10s, See Techbrief 334	T_pkg	260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25to125.

IRFP440 Features

• 8.8A, 500V
• r_DS(ON) = 0.850W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

IRFP440B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild!'s proprietary planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

IRFP440B Maximum Ratings

Symbol	Parameter	IRFP250B	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C= 100)	8.5 5.4	A A
I_DM V_GSS E_AS I_AR E_AR dv/dt	Drain Current- Pulsed(Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy(Note 2) Avalanche Current(Note 1) Repetitive Avalanche Energy(Note 1) Peak Diode Recovery dv/dt(Note 3)	34 ±30 320 8.5 16.2 5.5	A V mJ A mJ V/ns W
P_D	Power Dissipation (T_C= 25) - Derate above 25	162 1.3	W/
T_J,T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

	Parameter	Typ.	Max.	Units
R_JC R_CS R_JA	Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient	- 0.24 -	0.77 - 40	/W

IRFP440B Features

`8.5A, 500V, _RDS(on) = 0.8 @V_GS = 10 V
`Low gate charge ( typical 41 nC)
`Low Crss ( typical 35 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability

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