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This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources.
IRFP450 Maximum Ratings
Symbol
Parameter
Value
Uni t
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain- gate Voltage (RGS = 20 k)
500
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 °C
14
A
ID
Drain Current (continuous) at Tc = 100 °C
8.7
A
IDM(•)
Drain Current (pulsed)
56
A
Ptot
Total Dissipation at Tc = 25 oC
190
W
Derating Factor
1.5
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(•) Pulse width limited by safe operating area (1) ISD 14 A, di/dt 130 A/s, VDD V(BR)DSS, Tj TJMAX