IRFP450LC, IRFP450LCPBF, IRFP450N Selling Leads, Datasheet
MFG:IR Package Cooled:TO-3P D/C:08+/09+
IRFP450LC, IRFP450LCPBF, IRFP450N Datasheet download
Part Number: IRFP450LC
MFG: IR
Package Cooled: TO-3P
D/C: 08+/09+
IRFP450LC, IRFP450LCPBF, IRFP450N
- Table of contents:
Info of IRFP450LC
Info of IRFP450LCPBF
Info of IRFP450N
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About IRFP450LC
PDF/DataSheet Download
Datasheet: IRFP450LC
File Size: 348960 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRFP450N
PDF/DataSheet Download
Datasheet: IRFP450N
File Size: 123992 KB
Manufacturer:
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IRFP450LC General Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
IRFP450LC Maximum Ratings
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, V GS @ 10V |
14 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, V GS @ 10V |
8.6 | |
|
IDM |
Pulsed Drain Current |
56 | |
|
PD @TC = 25°C |
Power Dissipation |
190 |
W |
|
Linear Derating Factor |
1.5 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulse Avalanche Energy |
760 |
mJ |
|
IAR |
Avalanche Current |
14 |
A |
|
EAR |
Repetitive Avalanche Energy |
19 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
|
Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRFP450LC Features
·Ultra Low Gate Charge
·Reduced Gate Drive Requirement
·Enhanced 30V Vgs Rating
·Reduced Ciss, Coss, Crss
·Isolated Central Mounting Hole
·Dynamic dv/dt Rated
·Repetitive Avalanche Rated
·Reduced Gate Drive Requirement
·Enhanced 30V Vgs Rating
·Reduced Ciss, Coss, Crss
·Isolated Central Mounting Hole
·Dynamic dv/dt Rated
·Repetitive Avalanche Rated
IRFP450N Maximum Ratings
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, V GS @ 10V |
14 |
A |
| ID @ TC = 100°C | Continuous Drain Current, V GS @ 10V |
8.8 | |
| IDM | Pulsed Drain Current |
56 | |
| PD @TC = 25°C | Power Dissipation |
200 |
W |
| Linear Derating Factor |
1.6 |
W/°C | |
| VGS | Gate-to-Source Voltage |
±30 |
V |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
IRFP450N Typical Application
· Switch Mode Power Supply (SMPS)
· Uninterruptible Power Supply
· High Speed Power Switching
· Uninterruptible Power Supply
· High Speed Power Switching
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