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·Low Gate Charge Qg results in Simple Drive Requirement ·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ·Fully Characterized Capacitance and Avalanche Voltage and Current ·Effective Coss Specified (See AN 1001)
IRFPS37N50A Typical Application
·Switch Mode Power Supply (SMPS) ·Uninterruptable Power Supply ·High Speed Power Switching
IRFPS37N50APBF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
36
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
23
IDM
Pulsed Drain Current
144
PD @TC = 25°C
Power Dissipation
446
W
Linear Derating Factor
3.6
W/
VGS
Gate-to-Source Voltage
±30
V
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
IRFPS37N50APBF Typical Application
· Switch Mode Power Supply (SMPS) · Uninterruptable Power Supply · High Speed Power Switching · Lead-Free