MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:06+
IRFR240, IRFR2405, IRFR2405PBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-252
D/C: 06+
Description: MOSFET N-CH 55V 56A DPAK
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PDF/DataSheet Download
Datasheet: IRFR2405
File Size: 132466 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFR2405
File Size: 132466 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 56 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 40 | |
| IDM | Pulsed Drain Current | 220 | |
| PD @TC = 25°C | Power Dissipation | 110 | W |
| Linear Derating Factor | 0.71 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 130 | mJ |
| IAR | Avalanche Current | 34 | A |
| EAR | Repetitive Avalanche Energy | 11 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
| Technical/Catalog Information | IRFR2405PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 56A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 34A, 10V |
| Input Capacitance (Ciss) @ Vds | 2430pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR2405PBF IRFR2405PBF |
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 56 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 40 | |
| IDM | Pulsed Drain Current | 220 | |
| PD @TC = 25°C | Power Dissipation | 110 | W |
| Linear Derating Factor | 0.71 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 130 | mJ |
| IAR | Avalanche Current | 34 | A |
| EAR | Repetitive Avalanche Energy | 11 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
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