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IRFS3607PBF, IRFS38N20D, IRFS38N20DPBF

Table of contents:
Info of IRFS3607PBF
Info of IRFS38N20D
Info of IRFS38N20DPBF

IRFS3607PBF, IRFS38N20D, IRFS38N20DPBF Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:729

IRFS3607PBF, IRFS38N20D, IRFS38N20DPBF Datasheet download

Five Points

Part Number: IRFS38N20DPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-263

D/C: 729

Description: MOSFET N-CH 200V D2 PACK

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IRFS3607PBF Parameters

Technical/Catalog Information	IRFS3607PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	9 mOhm @ 46A, 10V
Input Capacitance (Ciss) @ Vds	3070pF @ 50V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	84nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFS3607PBF IRFS3607PBF

IRFS3607PBF Maximum Ratings

Symbol	Parameter	Max.	Units
I_D @T_C = 25	Continuous Drain Current, V_GS @ 10V	80	A
I_D @,T_C = 100	Continuous Drain Current, V_GS @ 10V	56
I_DM	Pulsed Drain Current	310
P_D @T_C = 25	Maximum Power Dissipation	140	W
	Linear Derating Factor	0.96	W/
V_GS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery	27	V/ns
T_JT_STG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds (1.6mm from case)	300
	Mounting Torque, 6-32 or M3 screw	10lb`in (1.1N` m)

IRFS3607PBF Typical Application

High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

IRFS38N20D Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	44	A
I_D@ T_C= 100°C	Continuous Drain Current, V_GS @ 10V	32
I_DM	Pulsed Drain Current	180
P_D @T_A= 25°C	Power Dissipation	3.8	W
P_D @T_C = 25°C	Power Dissipation	320	W
	Linear Derating Factor	2.1	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	9.5	V/ns
T_J	Operating Junction and	-55 to + 175	°C
T_STG	Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)

IRFS38N20D Typical Application

High frequency DC-DC converters

IRFS38N20DPBF Parameters

Technical/Catalog Information	IRFS38N20DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	54 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	3.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	91nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Other Names	IRFS38N20DPBF IRFS38N20DPBF

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