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IRFS4229PBF, IRFS42N20D, IRFS430

Table of contents:
Info of IRFS4229PBF
Info of IRFS42N20D
Info of IRFS430

IRFS4229PBF, IRFS42N20D, IRFS430 Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

IRFS4229PBF, IRFS42N20D, IRFS430 Picture

IRFS4229PBF, IRFS42N20D, IRFS430 Datasheet download

Five Points

Part Number: IRFS4229PBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: .

D/C: 06+

Description: MOSFET PDP SW 250V D2PAK

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IRFS4229PBF Parameters

Technical/Catalog Information	IRFS4229PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	48 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	4560pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFS4229PBF IRFS4229PBF

IRFS4229PBF General Description

This HEXFET^® Power MOSFET is specifically designed for Sustain;Energy Recovery&Pass switch applications in Plassma Display Panels.This MOSFET utilizes the latest processing tech niques to achieve low on-resistance per silicon are and low E_PULSE rating.Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient.robust and reliable device for PDP driving applications.

IRFS4229PBF Maximum Ratings

Symbol	Parameter	Max.	Units
V_GS	Gate-to-Source Voltage	±30	V
I_D @ T_A = 25	Continuous Drain Current,V_GS @ 10V	45	A
I_D @ T_A = 70	Continuous Drain Current,V_GS@ 10V	32
I_DM	Pulsed Drain Current	180
I_RP @T_C= 25	Repetitive Peak Current	91
P_D @T_C= 25	Power Dissipation	330	W
P_D @T_C = 70	Power Dissipation	190	W
	Linear Derating Factor	2.2	W/
T_J, T_STG	Operating Junction and Storage Temperature Range	-40 TO +175
	Soldering Temperature for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10l`bin (1.1Nm)	N

IRFS4229PBF Features

`Advanced Process Technology
`Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
`Low E_PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
`Low Q_G for Fast Response
`High Repetitive Peak Current Capability for Reliable Operation
`Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for Improved Ruggedness
`Repetitive Avalanche Capability for Robustness and Reliability

IRFS42N20D Maximum Ratings

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	42.6	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	30
IDM	Pulsed Drain Current	170
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	300	W
	Linear Derating Factor	2	W/°C
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	TBD	V/ns
TJ	Operating Junction and	-55 to + 175	°C
TSTG	Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)

IRFS42N20D Features

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current

IRFS42N20D Typical Application

·High frequency DC-DC converters

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