IRFS610BFP001, IRFS620/A, IRFS624B Selling Leads, Datasheet
MFG:Fairchild Package Cooled:TO-220 D/C:08+/09+
IRFS610BFP001, IRFS620/A, IRFS624B Datasheet download
Part Number: IRFS610BFP001
MFG: Fairchild
Package Cooled: TO-220
D/C: 08+/09+
IRFS610BFP001, IRFS620/A, IRFS624B
- Table of contents:
Info of IRFS610BFP001
Info of IRFS620/A
Info of IRFS624B
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFS624B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
IRFS624B Maximum Ratings
| Symbol | Parameter |
IRF624B |
IRFS624B |
Units |
| VDSS | Drain-Source Voltage |
250 |
V | |
| ID | Drain Current - Continuous (TC = 25mJ) - Continuous (TC = 100mJ) |
4.1 |
4.1* |
A |
|
2.6 |
2.6* |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
16.4 |
16.4* |
A |
| VGSS | Gate-Source Voltage |
± 30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
75 |
mJ | |
| IAR | Avalanche Current (Note 1) |
4.1 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
4.9 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
| PD | Power Dissipation (TC = 25mJ) - Derate above 25mJ |
49 |
34 |
W |
|
0.39 |
0.27 |
W/ | ||
| TJ,TSTG | Operating and Storage Temperature Range |
-55 to +150 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
||
IRFS624B Features
• 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V
• Low gate charge ( typical 13.5 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 13.5 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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