IRFS630, IRFS630A, IRFS630B Selling Leads, Datasheet
MFG:IR Package Cooled:TO-220 D/C:03+
IRFS630, IRFS630A, IRFS630B Datasheet download
Part Number: IRFS630
MFG: IR
Package Cooled: TO-220
D/C: 03+
IRFS630, IRFS630A, IRFS630B
- Table of contents:
Info of IRFS630
Info of IRFS630A
Info of IRFS630B
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About IRFS630
PDF/DataSheet Download
Datasheet: IRFS630
File Size: 286752 KB
Manufacturer: Samsung
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFS630A Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25 ) Continuous Drain Current (TC=100 ) |
6.5 4.1 |
A |
|
IDM |
Drain Current-Pulsed Gate-to-Source Voltage |
36 |
W/ |
|
VGS |
Gate-to-Source Voltage |
30 |
V |
|
EAS |
Single Pulse Avalanche Energy |
141 |
mJ |
|
IAR |
Avalanche Current |
6.5 |
A |
|
EAR |
Repetitive Avalanche Energy |
3.8 |
mJ |
|
dV/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
38 0.3 |
W |
|
TJ |
Operating Junction |
-55 to 150 |
|
|
TSTG |
Storage Temperature Range | ||
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |
IRFS630A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Low RDS(ON) : 0.333 (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ VDS = 200V
Low RDS(ON) : 0.333 (Typ.)
IRFS630B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
IRFS630B Maximum Ratings
| Symbol | Parameter |
IRF630B |
IRFS630B |
Units |
| VDSS | Drain-Source Voltage |
200 |
V | |
| ID | Drain Current - Continuous (TC = 25 ) -Continuous (TC = 100 ) |
9.0 |
9.0* |
A |
|
5.7 |
5.7* |
A | ||
| IDM | Drain Current-Pulsed (Note 1) |
36 |
36* |
A |
| VGSS | Gate-Source Voltage |
±30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
160 |
mJ | |
| IAR | Avalanche Current (Note 1) |
9.0 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
| PD | Power Dissipation (TC=25 ) - Derate above 25°C |
72 |
38 |
W |
|
0.57 |
0.3 |
W/ | ||
| TJ,TSTG | Operating and Storage Temperature Range |
- 55 to +150 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
||
IRFS630B Features
• 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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