IRFS634, IRFS634A, IRFS634B Selling Leads, Datasheet
MFG:IR Package Cooled:TO-220 D/C:08+/09+
IRFS634, IRFS634A, IRFS634B Datasheet download

Part Number: IRFS634
MFG: IR
Package Cooled: TO-220
D/C: 08+/09+
MFG:IR Package Cooled:TO-220 D/C:08+/09+
IRFS634, IRFS634A, IRFS634B Datasheet download

MFG: IR
Package Cooled: TO-220
D/C: 08+/09+
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PDF/DataSheet Download
Datasheet: IRFS634B
File Size: 880179 KB
Manufacturer: FAIRCHILD [ Fairchild Semiconductor ]
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFS634B
File Size: 880179 KB
Manufacturer: FAIRCHILD [ Fairchild Semiconductor ]
Download : Click here to Download
The IRFS634A has the following features including avalanche rugged technology;rugged gate oxide technology;lower input capacitance;improved gate charge;extended safe operating area;lower leakage current;lower RDS(ON).
MXD2020E/F is easily interfaced with low cost microcontrollers. For the digital output accelerometer, one digital input port is required to read one accelerometer output. For the analog output accelerometer, many low cost microcontrollers are available today that feature integrated a/d (analog to digital converters) with resolutions ranging from 8 to 12 bits. DOUTTxP and DOUTTxN are differential serial outputs that interface to copper or an optical I/F module. These terminals transmit NRZ data at a rate of 20 times the GTx_CLK value. DOUTTxP and DOUTTxN are put in a high-impedance state when LOOPENx is high and are active when LOOPENx is low. During power-on reset these terminals are high impedance. For the CY7C53120L8, the user application program is stored in on-chip Flash memory. It may be programmed using a device programmer before board assembly, or may be programmed in-circuit after board assembly through a propri- etary 11-pin programming interface or over the LonTalk network from an external network management tool.
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
| Symbol | Parameter |
IRF634B |
IRFS634B |
Units |
| VDSS | Drain-Source Voltage |
250 |
V | |
| ID | Drain Current - Continuous (TC = 25 ) -Continuous (TC = 100 ) |
8.1 |
8.1* |
A |
|
5.1 |
5.1* |
A | ||
| IDM | Drain Current-Pulsed (Note 1) |
32.4 |
32.4* |
A |
| VGSS | Gate-Source Voltage |
±30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
200 |
mJ | |
| IAR | Avalanche Current (Note 1) |
8.1 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.4 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
| PD | Power Dissipation (TC=25 ) - Derate above 25°C |
74 |
38 |
W |
|
0.59 |
0.3 |
W/ | ||
| TJ,TSTG | Operating and Storage Temperature Range |
- 55 to +150 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
||
