IRFS644A, IRFS644B, IRFS645 Selling Leads, Datasheet
Package Cooled:TO-220 D/C:06+
IRFS644A, IRFS644B, IRFS645 Datasheet download
Part Number: IRFS644A
MFG: --
Package Cooled: TO-220
D/C: 06+
IRFS644A, IRFS644B, IRFS645
- Table of contents:
Info of IRFS644A
Info of IRFS644B
Info of IRFS645
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFS644A Maximum Ratings
| SYMBOL | Parameter | Value | UNIT |
| VDSS | Continuous Drain Current(TC=25) | 250 | V |
| ID | Continuous Drain Current (TC=100) | 7.9 5 |
V |
| IDM | Drain Current-Pulsed | 56 | V |
| VGS | Gate-to-Source Voltage | ±30 | mA |
| EAS IAR EAR |
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy |
390 7.9 4.3 |
V mJ A |
| dv/dt | Peak Diode Recovery dv/dt | 4.8 | V/ns |
| PD | Total Power Dissipation (TC=25) Linear Derating Factor |
43 0.35 |
W W/ |
| TJ,TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds |
300 |
IRFS644A Features
` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = 250V
` Lower RDS(ON) : 0.214 (Typ.)
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = 250V
` Lower RDS(ON) : 0.214 (Typ.)
IRFS644B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
IRFS644B Maximum Ratings
| Symbol | Parameter | IRF644B | IRFS644B | Units |
| VDSS | Drain to Source Voltage | 250 | V | |
| ID | Continuous Drain Current(@TC = 25°C) | 14 | 14* | A |
| Continuous Drain Current(@TC = 100°C) | 8.9 | 8.9* | A | |
| IDM | Drain Current Pulsed (Note 1) | 56 | 56* | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 480 | mJ | |
| IAR | Avalanche Current (Note 1) | 14 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation(@TC = 25 °C) | 139 | 43 | W |
| - Derate above 25°C | 1.11 | 0.35 | W/ | |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
IRFS644B Features
• 14A, 250V, RDS(on) = 0.28 @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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