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IRFS830B, IRFS830BTU, IRFS831

Table of contents:
Info of IRFS830B
Info of IRFS830BTU
Info of IRFS831

IRFS830B, IRFS830BTU, IRFS831 Selling Leads, Datasheet

Package Cooled:TO-220F D/C:09+

IRFS830B, IRFS830BTU, IRFS831 Datasheet download

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Part Number: IRFS830B

MFG: --

Package Cooled: TO-220F

D/C: 09+

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IRFS830B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

IRFS830B Maximum Ratings

Symbol	Parameter	IRF830B	IRFS830	Units
V_DSS	Drain-Source Voltage	500		V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C = 100)	4.5	4.5*	A
I_D		2.9	2.9*	A
I_DM	Drain Current - Pulsed (Note 1)	18	18*	A
V_GSS	Gate-Source Voltage	±30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	270		mJ
I_AR	Avalanche Current (Note 1)	4.5		A
E_AR	Repetitive Avalanche Energy (Note 1)	7.3		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	73	38	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.58	0.3	W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

IRFS830B Features

• 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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