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IRFZ46NSTRLPBF, IRFZ46S, IRFZ46STRL

Table of contents:
Info of IRFZ46NSTRLPBF
Info of IRFZ46S
Info of IRFZ46STRL

IRFZ46NSTRLPBF, IRFZ46S, IRFZ46STRL Selling Leads, Datasheet

MFG:International Rectifier (VA) Category:Discrete Semiconductor Products Package Cooled:6,400 D/C:06+

IRFZ46NSTRLPBF, IRFZ46S, IRFZ46STRL Datasheet download

Five Points

Part Number: IRFZ46NSTRLPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier (VA)

Package Cooled: 6,400

D/C: 06+

Description: MOSFET N-CH 55V 53A D2PAK

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IRFZ46NSTRLPBF Parameters

Technical/Catalog Information	IRFZ46NSTRLPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	53A
Rds On (Max) @ Id, Vgs	16.5 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds	1696pF @ 25V
Power - Max	3.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ46NSTRLPBF IRFZ46NSTRLPBF IRFZ46NSTRLPBFCT ND IRFZ46NSTRLPBFCTND IRFZ46NSTRLPBFCT

IRFZ46S General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46L) is available for lowprofile applications.

IRFZ46S Maximum Ratings

	Parameter	Max.	Units
I_D@ T_C = 25°C	Continuous Drain Current,V_GS @ 10V	50	A
I_D@ T_C= 100°C	Continuous Drain Current,V_GS @ 10V	38
I_DM	Pulsed Drain Current	220
P_D @T_A = 25°C	Power Dissipation	3.7	W
P_D @T_C = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/°C
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	81	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55to+175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C

Thermal Resistance

	Parameter	Typ.	Max.	Units
R_JC	Junction-to-Case	-	1.0	°C/W
R_JA	Junction-to-Ambient ( PCB Mounted,steady-state)**	-	40	°C/W

IRFZ46S Features

· Advanced Process Technology
· Surface Mount (IRFZ46S)
· Low-profile through-hole (IRFZ46L)
· 175°C Operating Temperature
· Fast Switching

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