IRFZ48NSTRR, IRFZ48RSPBF, IRFZ48SPBF Selling Leads, Datasheet
MFG:IR Package Cooled:SOT-363 D/C:08+
IRFZ48NSTRR, IRFZ48RSPBF, IRFZ48SPBF Datasheet download
Part Number: IRFZ48NSTRR
MFG: IR
Package Cooled: SOT-363
D/C: 08+
IRFZ48NSTRR, IRFZ48RSPBF, IRFZ48SPBF
- Table of contents:
Info of IRFZ48NSTRR
Info of IRFZ48RSPBF
Info of IRFZ48SPBF
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About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRF034
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRFZ48RSPBF General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
IRFZ48RSPBF Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 50* | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 50* | |
| IDM | Pulsed Drain Current | 290 | |
| PD @TC = 25 | Power Dissipation | 190 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 100 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 econds |
-55 to + 175 300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFZ48RSPBF Features
· Advanced Process Technology
· Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Drop in Replacement of the IRFZ48 for Linear/Audio Applications
· Lead-Free
· Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Drop in Replacement of the IRFZ48 for Linear/Audio Applications
· Lead-Free
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