MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:N/A D/C:0635+
IRFZ48V, IRFZ48VPBF, IRFZ48VS Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: N/A
D/C: 0635+
Description: MOSFET N-CH 60V 72A TO-220AB
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Datasheet: IRFZ48V
File Size: 114036 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRFZ48VS
File Size: 289483 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRFZ48V |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 72A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 43A, 10V |
| Input Capacitance (Ciss) @ Vds | 1985pF @ 25V |
| Power - Max | 150W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFZ48V IRFZ48V |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 72 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 51 | |
| IDM | Pulsed Drain Current | 290 | |
| PD @TC = 25°C | Power Dissipation | 150 | W |
| Linear Derating Factor | 1.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 166 | mJ |
| IAR | Avalance Current | 72 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.3 | V/ns |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to +175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbfin (1.1Nm) |
| Technical/Catalog Information | IRFZ48VPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 72A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 43A, 10V |
| Input Capacitance (Ciss) @ Vds | 1985pF @ 25V |
| Power - Max | 150W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ48VPBF IRFZ48VPBF |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 72 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 51 | |
| IDM | Pulsed Drain Current | 290 | |
| PD @TC = 25°C | Power Dissipation | 150 | W |
| Linear Derating Factor | 1.0 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 166 | mJ |
| IAR | Avalance Current | 72 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.3 | V/ns |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to +175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbfin (1.1Nm) |
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