MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220AB D/C:07+
IRFZ48Z, IRFZ48ZL, IRFZ48ZPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-220AB
D/C: 07+
Description: MOSFET N-CH 55V 61A TO-220AB
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: IRFZ48Z
File Size: 287666 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRFZ48ZL
File Size: 287666 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRF034
File Size: 147521 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 43 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @TC = 25°C | Maximum Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 73 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 120 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 43 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @TC = 25°C | Maximum Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 73 | mJ |
| EAS (tested) | Single Pulse Avalanche Energy Tested Value | 120 | |
| IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRFZ48ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 61A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 37A, 10V |
| Input Capacitance (Ciss) @ Vds | 1720pF @ 25V |
| Power - Max | 91W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 64nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ48ZPBF IRFZ48ZPBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 61 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V(See Fig. 9) | 43 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @ TC = 25 | Max. Power Dissipation | 91 | W |
| Linear Derating Factor | 0.61 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy (Thermally Limited) | 73 | mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 120 | |
| IAR | Avalanche Current | See Fig.12a,12b,15,16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to 175 | |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbfin (1.1Nm) |
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
Price: 5-6.5 USD
DL-7140-211M laser tube
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
