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IRG4P254S, IRG4P30B60KD, IRG4P4C40F

Table of contents:
Info of IRG4P254S
Info of IRG4P30B60KD
Info of IRG4P4C40F

IRG4P254S, IRG4P30B60KD, IRG4P4C40F Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:IOR D/C:04+

IRG4P254S, IRG4P30B60KD, IRG4P4C40F Datasheet download

Five Points

Part Number: IRG4P254S

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: IOR

D/C: 04+

Description: IGBT STD 250V 98A TO-247AC

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IRG4P254S Parameters

Technical/Catalog Information	IRG4P254S
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 55A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4P254S IRG4P254S

IRG4P254S Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	250	V
I_C @ T_C = 25	Continuous Collector Current	98^*	A
I_C @ T_C = 100	Continuous Collector Current	55
I_CM	Pulsed Collector Current	196
I_LM	Clamped Inductive Load Current	196
V_GE	Gate-to-Emitter Voltage	± 20	mJ
E_ARV	Reverse Voltage Avalanche Energy	160	mJ
P_D @ T_C = 25	Maximum Power Dissipation	200	W
P_D @ T_C = 100	Maximum Power Dissipation	78	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4P254S Features

• Standard: Optimized for minimum saturation voltage and operating
frequencies up to 10kHz
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than Generation 3
• Industry standard TO-247AC package

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