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IRG4BAC50S

Features: • Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz)• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3• Industry Super-220™ (TO-273AA) packageSpecifications ...

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SeekIC No. : 004377645 Detail

IRG4BAC50S: Features: • Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz)• Generation 4 IGBT design provides tighter parameter distribution and higher effi...

IRG4BAC50S Data Sheet

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Part Number:
IRG4BAC50S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry Super-220™ (TO-273AA) package


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
70
A
IC @ TC = 100°C Continuous Collector Current
41
ICM Pulsed Collector Current
140
ILM Clamped Inductive Load Current
140
VGE Gate-to-Emitter Voltage
± 20
V
EARV Reverse Voltage Avalanche Energy
20
mJ
PD @ TC = 25°C Maximum Power Dissipation
200
W
PD @ TC = 100°C Maximum Power Dissipation
78
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
0.64
°C/W
RCS Case-to-Sink, Flat, Greased Surface
0.50
-
RJA Junction-to-Ambient,typical socket mount
-
40
Wt Weight
TBD
-
g (oz)



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