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IRG4PC30, IRG4PC30F, IRG4PC30FD

Table of contents:
Info of IRG4PC30
Info of IRG4PC30F
Info of IRG4PC30FD

IRG4PC30, IRG4PC30F, IRG4PC30FD Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO-3P

IRG4PC30, IRG4PC30F, IRG4PC30FD Datasheet download

Five Points

Part Number: IRG4PC30F

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: 09+

D/C: TO-3P

Description: IGBT W/DIODE 600V 31A TO-247AC

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IRG4PC30F Parameters

Technical/Catalog Information	IRG4PC30F
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	31A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 17A
Power - Max	100W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4PC30F IRG4PC30F

IRG4PC30F Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current	31	A
I_C @ T_C = 100	Continuous Collector Current	17
I_CM	Pulsed Collector Current	120
I_LM	Clamped Inductive Load Current	120
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	10	mJ
P_D @ T_C = 25	Maximum Power Dissipation	100	W
P_D @ T_C = 100	Maximum Power Dissipation	42	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4PC30F Features

IRG4PC30FD Parameters

Technical/Catalog Information	IRG4PC30FD
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	31A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 17A
Power - Max	100W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4PC30FD IRG4PC30FD

IRG4PC30FD Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current	31	A
I_C @ T_C = 100	Continuous Collector Current	17
I_CM	Pulsed Collector Current	120
I_LM	Clamped Inductive Load Current	120
I_F @ T_C = 100	Diode Continuous Forward Current	12
I_FM	Diode Maximum Forward Current	120
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25	Maximum Power Dissipation	100	W
P_D @ T_C = 100	Maximum Power Dissipation	42	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4PC30FD Features

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard
   switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and
   higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-
   parallel diodes for use in bridge configurations
• Industry standard TO-247AC package

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