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IRG4PC50KPBF, IRG4PC50S, IRG4PC50SPBF

Table of contents:
Info of IRG4PC50KPBF
Info of IRG4PC50S
Info of IRG4PC50SPBF

IRG4PC50KPBF, IRG4PC50S, IRG4PC50SPBF Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:06+ D/C:06+

IRG4PC50KPBF, IRG4PC50S, IRG4PC50SPBF Datasheet download

Five Points

Part Number: IRG4PC50KPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: 06+

D/C: 06+

Description: IGBT STD 600V 70A TO247AC

Price Break

1
10
100
250
500
1000
2500
10000

Unit Price

6.60000
4.51700
3.59260
3.36600
3.22080
3.09540
2.94800
2.75000

Extended Price

6.60
45.17
359.26
841.50
1610.40
3095.40
7370.00
27500.00

(All prices are in USD) Prices for reference only

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IRG4PC50KPBF Parameters

Technical/Catalog Information	IRG4PC50KPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	52A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247AC
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PC50KPBF IRG4PC50KPBF

IRG4PC50KPBF General Description

The features of IRG4PC50KPbF are high short circuit rating optimized for motor control, tsc=10s, @360V VCE (start), TJ=125°C, VGE =15V; combines low conduction losses with high switching speed; latest generation design provides tighter parameter distribution and higher efnciency than prewousgenerations; lead-free.

The benefits of IRG4PC50KPbF are as a freewheeling diode we recommend our HEXFREDTM ultrafast, ultrasoit recovery diodes for minimum EMI I noise and switching losses in the diode and IGBT; latest generation 4 IGBTs offer highest power density motor controls possible; this part replaces the IRGPCSOK and IRGPCEOM devices.

The parameters of the IRG4PC50KPbF are VGE (gate-to-emitter Voltage)=±20V, IC @ Tc= 25°C (continuous drain current)=52A, ID @ Tc = 100°C (continuous drain current)=30A, ICM (pulsed collector current)=104A, EARV (reverse voltage avalanche energy)=170mJ, PD (@Tc= 25°C power dissipation)=200W, PD (@Tc=100°C power dissipation)=78W, ICM( pulsed collector current)= 104A, TJ (operating junction and)= -55 to + 150°C=TSTG(storage temperature range), (soldering temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( junction-to-case )=0.64(max)°C/W, RJA (junction-to-ambient, typical socket mount)= 40(typ)°C/W, RCS(case-to-sink, flat, greased surface)=0.24(typ)°C/W.

IRG4PC50KPBF Maximum Ratings

IRG4PC50KPBF Features

IRG4PC50S Parameters

Technical/Catalog Information	IRG4PC50S
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	1.36V @ 15V, 41A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4PC50S IRG4PC50S

IRG4PC50S Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current	70	A
I_C@ T_C = 100	Continuous Collector Current	41
I_CM	Pulsed Collector Current	140
I_LM	Clamped Inductive Load Current	140
V_GE	Gate-to-Emitter Voltage	± 20	mJ
E_ARV	Reverse Voltage Avalanche Energy	20	mJ
P_D @ T_C = 25	Maximum Power Dissipation	200	W
P_D @ T_C = 100	Maximum Power Dissipation	78	W
T_JT_STG	Operating Junction and Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4PC50S Features

• Standard: Optimized for minimum saturationvoltage and low
operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution
and higher efficiency than Generation 3
• Industry standard TO-247AC package

IRG4PC50SPBF Parameters

Technical/Catalog Information	IRG4PC50SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	1.36V @ 15V, 41A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PC50SPBF IRG4PC50SPBF

IRG4PC50SPBF General Description

The IRG4PC50SPbF is designed asinsulated gate bipolar transistor, standard speed IGBT. Typical benefits include generation 4 IGBT offer highest efficiency available, IGBT's optimized for specified application conditions and to be "drop-in" replacement for equivalent industry-standard generation 3 IR IGBTs.

It has four features. (1)Standard: optimized for minimum saturation voltage and low operating frequencies (<1kHz). (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. (3)Industry standard TO-247AC package. (4)Lead free. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its continuous drain current would be 70A at 25°C and would be 41A at 100°C. (2)Its collector to emitter breakdown voltage would be 600V. (3)Its pulsed collector current would be 140A. (4)Its clamped inductive load current would be 140A. (5)Its gate to emitter voltage would be +/-20V. (6)Its reverse voltage avalanche energy would be 20mJ. (7)Its maximum power dissipation would be 200W at 25°C and would be 78W at 100°C. (8)Its operating junction and storage temperature range would be from -55°C to +150°C. (9)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its emitter to collector breakdown voltage would be min 18V. (3)Its temperature coeff. of breakdown voltage would be typ 0.75V/°C. (4)Its gate threshold voltage would be min 3.0V and max 6.0V. (5)Its forward transconductance would be min 17S and typ 34S. (6)Its gate to emitter leakage current would be max 100nA. (7)Its total gate charge (turn on) would be typ 180nC and max 280nC. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

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